Accession Number:

AD0668468

Title:

FAST RECOVERY OF ELECTRON IRRADIATED GERMANIUM,

Descriptive Note:

Corporate Author:

ECOLE NORMALE SUPERIEURE PARIS (FRANCE) LABORATOIRE DE PHYSIQUE

Personal Author(s):

Report Date:

1968-01-15

Pagination or Media Count:

14.0

Abstract:

The fast recovery of electron concentration after a burst of 1 MeV electrons 1 mA during 15 microsec has been studied near 100 degrees K, in high purity n-type Germanium 10 to the 13th power to 3 x 10 to the 13th power Sbcc. Three different stages have been observed. 1 A fast decrease 10 microsec of excess carrier concentration. 2 A further decrease below the initial concentration, during 6 ms. This stage can be attributed to fillind of traps either created by irradiation, or grown in the crystal. 3 A return towards the initial concentration, through defect annealing. The time constant, at 100 degrees K, is 24 ms, and the activation energy, near 100 degrees K, is 0.14 eV. This stage appears negligible below 60 degrees K, as expected if it corresponds to the 65 degrees K defect. This behavior can be interpreted with a model based on the creation of a transient defect, stabilized by electronic capture, and then decaying by the usual annealing process. Author

Subject Categories:

  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE