RADIATION EFFECTS ON THIN FILM INTEGRATED CIRCUIT ELEMENTS.
Final rept. no. 9, 15 Oct 66-14 Oct 67,
AUTONETICS ANAHEIM CALIF
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The charge change seen by a thin-film conductor deposited on a substrate due to electrons scattered from the substrate by incident X rays was investigated both experimentally and theoretically. Targets consisting of thin-film aluminum conductor patterns were deposited on alumina, glass, and mica substrates and irradiated with photons from 600 keV and 2 MeV pulsed flash X-ray units and with both bremsstrahlung and 18 MeV electrons from a linear accelerator. It was found that electrons scattered from the substrate were emitted in two energy groups, one with energies less than 100 eV and one with energies of the same order of magnitude as the incident photon energy. The charge change seen by the conductor was found to be the result of scattering of electrons from the target by the incident photons and absorption by the target of electrons scattered from materials between the target and the photon source. The absorption or emission of the low energy electrons can be controlled by altering the potential on the target. The dependence of the charge scattering effect on photon energy conductor area, and target thickness was measured. The charge seen by the conductor was found to be proportional to the conductor area in the absence of fringe fields and to be an increasing function of substrate thickness. Theoretical calculations were made for the high-energy component of charge scattering for both thick and thin targets. This was found to be of the same order of magnitude as the high-energy component for the 600 keV X rays and to decrease relative to the high-energy component with increasing energy. The theoretical calculations of the high-energy component covered the photon energy range from 0.05 to 20 MeV. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products