THERMAL EMF OF THE SOLID SOLUTIONS OF INDIUM PHOSPHIDE AND GALLIUM ARSENIDE,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
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The dependence of the thermal emf on the composition and temperature has been investigated in InP, GaAs, and 9 InP-GaAs alloys with a composition varying from 0.1 InP-0.9 GaAs to 0.9 InP-0.1 GaAs, and an impurity concentration within limits of 1.7x10 to the 16th power to 3.0x10 to the 19th power. The thermal emf was measured on polycrystalline n- and p-specimens in a vacuum or a helium atmosphere in the 120 - 600 degrees K range the temperature difference at the hot and cold ends of the specimens was 10 - 12 degrees C. The differential thermal emf readings were practically identical during heating or cooling and increased with increasing temperature after passing through a small minimum below room temperature. At all test temperatures, the maximum value of alpha squared sigma where sigma is the specific electric conductivity was observed in an alloy containing 30 GaAs with increasing temperature, the value of alpha squared sigma increased.
- Electricity and Magnetism