ANALYSIS OF RADIATION INDUCED COUPLING EFFECTS BETWEEN INTEGRATED CIRCUIT ELEMENTS.
Scientific rept. no. 1, 12 May-10 Oct 67,
IBM FEDERAL SYSTEMS DIV OWEGO N Y ELECTRONICS SYSTEMS CENTER
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The report describes the investigation of several elements of an integrated circuit model in the initial phase of a program to analyze pulsed ionizing radiation effects on these elements. The radiation effects on silicon dioxide and semiconductor structures incorporating silicon-dioxide layers are considered. Physical and mathematical models are developed for this analysis. A SCEPTRE simulation was developed to solve the equations of the mathematical model. Experimental techniques are established for future dielectric studies under this program. Also analyzed is the isolation diffusion across the intersection of the NPN or PNP junctions of an isolation diffusion model. IBM recommends that no further effort be expended in this analysis. The transient radiation behavior of a junction FET is reviewed and a synthesis of an equivalent circuit model is described. Author
- Electrical and Electronic Equipment
- Solid State Physics