THE EFFECT OF CRYSTALLOGRAPHIC ORIENTATION ON THE GEOMETRY OF A FUSED P-N JUNCTION IN GALLIUM ARSENIDE,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
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The effect of crystallographic orientation on the shape of fused p-n transition boundaries was studied in p-type gallium arsenide. The results showed that for melting on surfaces with 110 and 100 orientations the p-n-interface did not have a regular geometrical shape even for very small drops. Reference was made to the work of Ellis J. Appl. Phys., 1959, v. 30, no. 6, p. 946 where gallium arsenide was grown on vertical 110 surfaces of seed crystals.
- Solid State Physics