HIGH PERFORMANCE THIN FILMS FOR MICROCIRCUITS.
Quarterly rept. no. 10, 1 Jun-31 Aug 67,
RADIO CORP OF AMERICA SOMERVILLE N J DEFENSE MICROELECTRONICS
Pagination or Media Count:
Fabrication of 1-megohm thin-film hafnium resistors 10,000 ohmssq. exhibiting temperature coefficients of resistance TCR of approximately -900 ppm was accomplished. A complete TCR curve was plotted from experimental data obtained from samples between 6 and 10,000 ohmssq. deposited on glazed ceramic substrates. Investigation of etching procedures for fine-line resistor patterns to be deposited on passivated silicon wafers was begun. New resistor test patterns were chosen which will yield 1000 individual elements of five different geometries per wafer. Procedures for fabrication of resistors and capacitors using hafnium technology on silicon are outlined. Detailed capacitance-voltage plots of the hafnium-dioxide films indicated the presence of contaminants. Modifications in the fabrication processes eliminated most of the contamination. Characteristics are reported for P-channel MOS devices which were fabricated. Author
- Electrical and Electronic Equipment