Accession Number:

AD0662127

Title:

INVESTIGATION OF RADIATION HARDENED CIRCUIT ELEMENTS,

Descriptive Note:

Corporate Author:

TRW SYSTEMS REDONDO BEACH CALIF

Personal Author(s):

Report Date:

1967-08-15

Pagination or Media Count:

38.0

Abstract:

A program was initiated to derive radiation hardened insulated gate field effect devices. Initial devices fabricated in silicon three microns thick was completed. The first lots obtained were P enhancement and N depletion devices. The device structures are shown with electrical characteristics. A theoretical derivation of transient currents in these VTT Very Thin Technique devices is shown and compared with conventional MOS and dielectrically isolated bipolar transistors. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE