Accession Number:

AD0661576

Title:

CONDUCTIVITY OF INTRINSIC INSB IN HIGH ELECTRIC FIELDS,

Descriptive Note:

Corporate Author:

ROYAL INST OF TECH STOCKHOLM (SWEDEN) MICROWAVE DEPT

Personal Author(s):

Report Date:

1967-07-06

Pagination or Media Count:

25.0

Abstract:

A theory is developed for the carrier transport properties and impact ionization rate in an intrinsic polar semiconductor with high carrier density. Polar scattering prevails in weak fields but it is shown that intercarrier interactions become important at higher field strengths. The carrier concentration is found to vary approximately exponentially with applied field. Numerical results for data representative of InSb are presented. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE