RESEARCH ON THE MECHANISM OF THE PHOTOVOLTAIC EFFECT IN HIGH-EFFICIENCY CDS THIN-FILM SOLAR CELLS.
Interim rept. 1 Jun 66-31 May 67,
CLEVITE CORP CLEVELAND OHIO
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During the first year of this project Model 1066, an explanation of the mechanism responsible for the photovoltaic effect in thin-film CdS solar cells was developed. Emphasis has since been placed on critical experiments designed to test this model, and to establish cell parameters essential to further refinement of the model. Experiments which have been carried out include measurements of the thickness of the Cu2S layer, examination of the grain structure of the CdS layer, measurements of optical absorption in and examination of the crystallography and stoichiometry of the Cu2S layer, diffusion and solubility measurements for Cu in CdS, and measurements of junction capacitance, current-voltage characteristics and spectral response of CdS solar cells. In addition, a unique evaporation system has been developed and is being used successfully. Findings of these investigations have all been in general agreement with Model 1066, which involves light absorption by hole-electron pair generation in the p-type Cu2S layer, followed by diffusion of the minority electrons into a copper-compensated dark-insulating CdS layer, and collection of these at an i-n CdS homojunction.
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