Accession Number:

AD0661323

Title:

SILICON DIODE FAST NEUTRON DOSIMETER. PHASE II. ISOCHRONAL AND ISOTHERMAL ANNEALS OF THE RADIATION DAMAGE,

Descriptive Note:

Corporate Author:

PHYLATRON CORP COLUMBUS OHIO

Report Date:

1967-10-01

Pagination or Media Count:

48.0

Abstract:

A discussion of the theory of annealing based on diffusion-limited processes is presented, along with the development of the characteristic equations for both monomolecular and bimolecular processes. A development of the theoretical dependence of the annealing characteristics on the chemical impurity concentration is also presented. Isochronal and isothermal anneals of the lifetime and forward voltage of p-i-n diodes, degraded by fast neutron bombardment, were performed over the temperature range from 23C to 200C. The diodes were made from both n- and p-type, pulled and float zone material. Resistivities ranged from 50 to 1000 ohm-cm. The isochronal and isothermal results indicated that there are three dominant defects one which anneals at room temperature one which anneals in the 50C to 120C temperature range and another which starts to anneal above 120C. All defects anneal with second-order kinetics. None of the defects seems to be associated with chemical impurities originally present in the material. Author

Subject Categories:

  • Nuclear Instrumentation
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE