MEASUREMENT OF F SUB T FOR ANALYZING THE LARGE-SIGNAL RF BEHAVIOR OF POWER TRANSISTORS.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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A technique for measuring the f sub T of radio frequency RF power transistors over a broad range of operational current and dissipation levels is described. The method employs a pulsed biasing technique to avert thermal damage to the device. Such high current f sub T measurements provide a more meaningful description of the RF performance capability of a power transistor than the low current level f sub T values conventionally measured and quoted on transistor specifications. The potential of the approach is illustrated by a family of constant f sub T contours developed over the full operating voltage-current range of a modern 50 watt - 80 MHz power transistor. Author
- Electrical and Electronic Equipment