Accession Number:

AD0661051

Title:

MEASUREMENT OF F SUB T FOR ANALYZING THE LARGE-SIGNAL RF BEHAVIOR OF POWER TRANSISTORS.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s):

Report Date:

1967-09-01

Pagination or Media Count:

17.0

Abstract:

A technique for measuring the f sub T of radio frequency RF power transistors over a broad range of operational current and dissipation levels is described. The method employs a pulsed biasing technique to avert thermal damage to the device. Such high current f sub T measurements provide a more meaningful description of the RF performance capability of a power transistor than the low current level f sub T values conventionally measured and quoted on transistor specifications. The potential of the approach is illustrated by a family of constant f sub T contours developed over the full operating voltage-current range of a modern 50 watt - 80 MHz power transistor. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE