Accession Number:

AD0659789

Title:

HIGH-INFORMATION-DENSITY STORAGE SURFACES.

Descriptive Note:

Quarterly rept. no. 9, 1 Apr-30 Jun 67,

Corporate Author:

STANFORD RESEARCH INST MENLO PARK CALIF

Personal Author(s):

Report Date:

1967-10-01

Pagination or Media Count:

35.0

Abstract:

The program was devoted to the preparation and investigation of two novel kinds of electron-beam-addressable storage elements of submicron size and densely-packed arrays of these elements. One such element, called a micron-cap consists of an isolated microcapacitor at the bottom of a hole in a metaldielectricmetal film sandwich. The other element, called a micron-ring, consists of an isolated metal film ring embedded concentrically with a hole in the dielectric of a multilayer metaldielectric film sandwich. Storage and readout data on micron-cap elements were taken at low beam energies near to the lower unity-crossover energy for secondary emission. System changes were made to allow higher sensitivity and higher-speed operation, as well as to facilitate high-beam-energy investigations. The mildly bakeable 400C field emitter and molybdenum lens system and the associated commercial ultra-high-vacuum system have been assembled, the manipulators tested and found satisfactory, and beam measurements begun. Work on storage structures is being concentrated on attempts to wake regular arrays with a commercial electron probe capability of producing approximately 10,000 elements in a field has been shown. Attempts are underway to make micron-ring elements using the same electron probe to polymerize electron-sensitive resist in the critical step of forming the ring. Author

Subject Categories:

  • Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE