A STUDY OF PHOTON LOSS IN THE ACTIVE AND PASSIVE REGIONS OF A SEMICONDUCTOR LASER.
Interim technical rept.,
CORNELL UNIV ITHACA N Y MATERIALS SCIENCE CENTER
Pagination or Media Count:
Measurement and evaluation was made of the photon loss in the active and passive regions of a GaAs laser pumped by an electron beam. A theoretical expression was developed which gives the threshold current density required to produce lasing in an electron-beam-pumped laser when a portion of the length between Fabry-Perot surfaces was masked from the electron beam. This theoretical relation was experimentally verified by measurement of threshold current density as a function of masked length for numerous samples of GaAs at 4K. On the basis of these measurements the photon loss coefficients in the active and passive regions of the laser crystals were determined. The loss coefficients were found to be strongly dependent on impurity doping concentration. In addition the loss coefficient in the active region was observed to be less than the loss coefficient in passive material. This is attributed to an inhibiting of interband absorptive transitions by the inverted population in the active region. Author
- Lasers and Masers