Accession Number:

AD0658089

Title:

HALL COEFFICIENT AND TRANSVERSE MAGNETORESISTANCE IN HGTE AT 4.2K AND 77K

Descriptive Note:

Technical note

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Report Date:

1967-08-25

Pagination or Media Count:

31.0

Abstract:

A band structure model is proposed which is consistent with magneto- Hall and magneto-resistance data obtained for various samples of HgTe at 4.2K. Using an optimization routine it was ascertained that the data could be fitted on the basis of a three-carrier model involving two sets of electrons and one set of holes. Under special crystal growth conditions the electron Hall mobility at 4.2K of HgTe exceeded 640,000 sq cmv-sec.

Subject Categories:

  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE