HALL COEFFICIENT AND TRANSVERSE MAGNETORESISTANCE IN HGTE AT 4.2K AND 77K
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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A band structure model is proposed which is consistent with magneto- Hall and magneto-resistance data obtained for various samples of HgTe at 4.2K. Using an optimization routine it was ascertained that the data could be fitted on the basis of a three-carrier model involving two sets of electrons and one set of holes. Under special crystal growth conditions the electron Hall mobility at 4.2K of HgTe exceeded 640,000 sq cmv-sec.
- Electricity and Magnetism
- Solid State Physics