Accession Number:

AD0657365

Title:

RADIATION DAMAGE IN SEMICONDUCTORS.

Descriptive Note:

Final rept. 1 Jul 65-30 Jun 66,

Corporate Author:

ECOLE NORMALE SUPERIEURE PARIS (FRANCE) LABORATOIRE DE PHYSIQUE

Report Date:

1966-12-01

Pagination or Media Count:

55.0

Abstract:

Work is reported in the following areas 1 Photon irradiation enhanced diffusion in germanium at temperatures above 600 degrees C 2 Photoconductivity of electron-irradiated silicon at 20 degrees K 3 Low temperature annealing of N-type germanium 4 Fast annealing of pulse-irradiated germanium preliminary work in progress.

Subject Categories:

  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE