RADIATION DAMAGE IN SEMICONDUCTORS.
Final rept. 1 Jul 65-30 Jun 66,
ECOLE NORMALE SUPERIEURE PARIS (FRANCE) LABORATOIRE DE PHYSIQUE
Pagination or Media Count:
Work is reported in the following areas 1 Photon irradiation enhanced diffusion in germanium at temperatures above 600 degrees C 2 Photoconductivity of electron-irradiated silicon at 20 degrees K 3 Low temperature annealing of N-type germanium 4 Fast annealing of pulse-irradiated germanium preliminary work in progress.
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics