RESEARCH IN PURIFICATION AND SINGLE GROWTH OF II-VI COMPOUNDS.
Interim rept. 15 Apr 65-14 Apr 67,
EAGLE-PICHER INDUSTRIES INC MIAMI OKLA MIAMI RESEARCH LABS
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A process for the purification of cadmium metal by multiple treatment steps is described. Impurities in cadmium, as determined by emission spectrographic, mass spectrographic, and atomic absorption are given in tabular form. The preparation of various pure semiconductor materials of the Group II-VI compound type is discussed and tables of analytical data for each are included. The level of impurity concentration in synthesized cadmium sulfide was significantly lowered. Less than 1 part per million atomic total impurities was found by the mass spectrograph in two batches of CdS. The growth of crystals of pure II-VI compounds and mixtures of compounds from the melt is reported. Included are data concerning doping of melt grown crystals with various elemental dopants, and, in the case of some compound semiconductors, the maximum doping levels possible by this method. Author
- Solid State Physics