Accession Number:

AD0657023

Title:

NEW SOLID-STATE DEVICE CONCEPTS,

Descriptive Note:

Corporate Author:

GENERAL ELECTRIC CO SCHENECTADY N Y RESEARCH AND DEVELOPMENT CENTER

Report Date:

1967-06-01

Pagination or Media Count:

1.0

Abstract:

Electrical transport studies in p-type ZnTe have confirmed that in the temperature range of about 80 to 500K the hole mobility is principally limited by LO phonon scattering. An effective mass ratio of 0.6 gives the best fit to the experimental data. The highest mobility, 6500 cm squaredv sec at 35K, was observed in a crystal with an active defect center concentration of 2 x 10 to the 15th powercc. The ionization energy of the first charge state of a native acceptor, believed to be a Zn vacancy, was found to be or 0.057 plus or minus 0.002 ev. Low-resistance electrical contacts to p-type ZnTe and ZnSexTe1-x can be made by diffusing Li from a Li salt into the area of the crystal to be contacted and forming an electroless Au deposit on top of the Li-diffused area. The Li-Au contacts stay nearly ohmic down to 35K and have been used on crystals having carrier concentrations below 10 to the 9th powercc. Detailed studies of the current voltage relations for thin-film diodes of gallium arsenide have shown that the negative resistance and bistable resistance at zero bias are intimately related to the properties of the tellurium counter-electrode. Optical and electrical measurements on the films of evaporated tellurium have shown these films to be p-type semiconductors with an energy gap of 0.7 to 0.8 volt. Diodes are now being fabricated in a geometry compatible with integrated circuit techniques.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE