JUNCTION FIELD-EFFECT TRANSISTOR CHARACTERISTICS RELEVANT TO ANALOG SWITCH CIRCUITS.
JOHNS HOPKINS UNIV SILVER SPRING MD APPLIED PHYSICS LAB
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The junction Field-Effect Transistor FET is evaluated for use in analog switch circuits. FET characteristics, such as channel resistance, drain cutoff current, pinch-off voltage and device capacitance, are analyzed for sensitivity to changes in temperature and voltage. Equivalent circuits are provided for an FET used as an analog switch. Separate equivalent circuits are used for transient analysis and steady-state analysis. A series analog switch is analyzed for turn-off transients that occur for various rise-time gate control signals. An effective voltage Ve is introduced to facilitate a two-part transient analysis for an initial and final turn-off transient. Turn-on transients are analyzed qualitatively. A steady-state analysis shows the effect of temperature on the error voltage at the analog switch output. Author
- Electrical and Electronic Equipment