Accession Number:

AD0656678

Title:

RADIATION STUDY ON MOS STRUCTURES,

Descriptive Note:

Corporate Author:

FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CALIF FAIRCHILD SEMICONDUCTOR DIV

Personal Author(s):

• Snow,E. H.
• Grove,A. S.
• Fitzgerald,D. J.

Report Date:

1967-08-01

Pagination or Media Count:

43.0

Abstract:

Two effects of ionizing radiation on oxidized silicon surfaces have been reported the formation of a space charge in the oxide and the creation of surface states at the oxide-silicon interface. In this report, the effects of processing variables--including substrate type, oxidation conditions, and gettering steps--on the above two phenomena are described. In addition, the effect of temperature on the rate of surface-state production is reported. High energy electron irradiations have been performed and the results compared to previous data taken with low energy electrons and X-rays. It is concluded that a given dose of any ionizing radiation has the same effect on the oxide space charge. Device studies have been extended to include junction field-effect transistors and it is concluded that these devices are less sensitive to ionizing radiation than either MOS or bipolar devices. Experiments with nuclear reactor irradiation show that in a reactor environment bulk damage due to fast neutrons dominates in the degradation of bipolar transistors, junction field-effect transistors, and p-n junction diodes, whereas, surface effects due to ionizing radiation present in the reactor are most important in the case of MOS transistors. Author

Descriptors:

• *DAMAGE
• *TRANSISTORS
• DAMAGE
• SILICON
• OXIDATION
• SILICON DIOXIDE
• SPACE CHARGE
• INTERFACES
• CHARGE CARRIERS
• PROCESSING
• ELECTRON IRRADIATION
• FAST NEUTRONS
• CAPACITORS
• SEMICONDUCTOR DIODES
• FIELD EFFECT TRANSISTORS
• FIELD EFFECT TRANSISTORS

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE