THE EFFECT OF PRESSURE ON OPTICAL ABSORPTION, RECOMBINATION RADIATION, AND RESISTIVITY OF GASB.
HARVARD UNIV CAMBRIDGE MASS DIV OF ENGINEERING AND APPLIED PHYSICS
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The report described measurements of the effect of pressure on optical absorption, electroluminescence, photoluminescence and resistivity of GaSb. These measurements provide experimental values for two parameters of the GaSb energy band structure pressure coefficient of the direct energy gap, and spin orbit splitting in the valence band at k 0, and are analyzed to give information about Te, Se, and S donor impurity levels in GaSb. The effect of pressure on the resistivity of the n-type samples was measured the observed increases in resistivity were much larger especially in Se doped GaSb than predicted by the increase in ionization energy of the Gamma 1 level mentioned above. Therefore, the presence of a second impurity level associated with the subsidiary L1 conduction band minima was invoked, and it was then possible to explain the observed increase in resistivity. From this and similar resistivity experiments on n-type GaSb the following impurity levels have been identified Se and Te levels associated with the L1 conduction band minima, and Se and S levels associated with X1 conduction band minima. In each case, the apparent pressure coefficient of an impurity level was used to identify it with either the L1 or X1 conduction band. Author
- Solid State Physics