MATHEMATICAL INVESTIGATIONS OF SEMICONDUCTOR DEVICES.
Final rept. 1 Apr 66-1 Apr 67,
INTERNATIONAL BUSINESS MACHINES CORP HOPEWELL JUNCTION N Y EAST FISHKILL FACILITY
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The report covers a mathematical analysis of the mechanisms of operation with a Small Current Amplifying Device SCAD. The analysis is in two spatial variables and includes the mixed boundary conditions encountered in a practical semiconductor device. Computer calculated distributions are graphically illustrated to show the space-charge and voltage drop within a source-drain channel, at equilibrium and also throughout a range of biasing conditions. Included in this report is a detailed one-dimensional analysis of the linearly-graded p-n junction. This analysis discusses several modes of operation not characterized by the depletion layer theory for example, forward bias and reverse bias collector junction operation. A detailed comparison is presented between the results of this rigorous computational investigation, and the results obtained by other authors using more approximate methods of mathematical analysis. Author
- Electrical and Electronic Equipment
- Solid State Physics