MICROWAVE PROPAGATION IN A SINGLE-CARRIER SEMICONDUCTOR, INCLUDING EFFECTS OF COLLISION AND DIFFUSION.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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The propagation characteristics of slow electromagnetic waves in a single-carrier semiconductor are derived under the small-signal assumption. The effect of a longitudinal magnetic field is included. The case of an infinite slab of finite thickness is treated for the case of metallic boundaries on both sides. The Brillouin diagram is shown for several values of collision and diffusion parameters, and the attenuation and instability regions are computed. The possibility of using a drifted semiconductor to interact with a slow-wave circuit for microwave generation and amplification is investigated. Author
- Electrical and Electronic Equipment
- Solid State Physics
- Radiofrequency Wave Propagation