LINVILL MODELING OF DISTRIBUTED DEVICES.
PICATINNY ARSENAL DOVER N J ENGINEERING SCIENCES LAB
Pagination or Media Count:
The Linvill model for distributed devices is described and its application to the low-, moderate-, and high injection phenomena occurring in the transistor base region is discussed. Use of the Linvill model is first illustrated in terms of the one-dimensional diode how the treatment can be extended to the transistor is then indicated. The version of the Linvill model used in this report is generalized to include the drift and diffusion effects of both majority and minority carriers. Author
- Electrical and Electronic Equipment