HIGH PERFORMANCE THIN FILMS FOR MICROCIRCUITS.
Quarterly rept. no. 8, 1 Dec 66-28 Feb 67,
RADIO CORP OF AMERICA SOMERVILLE N J DEFENSE MICROELECTRONICS
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Thin-film hafnium-hafnium-dioxide capacitors have been fabricated on silicon substrates, and mounted and encapsulated in TO-5 cans. The temperature coefficient of capacitance can be as low as 50 ppmC up to 350 C and seems to be smaller than that of thin-film hafnium-hafnium-dioxide capacitors, nonencapsulated, and deposited on passive substrates. Additional measurements will be performed to obtain more information on the TCC. During the fabrication of P-channel MOS transistors with HfO2 gate insulators, difficulty has occurred in complete anodization of the metal film over the channel region. For this reason the resistance between source and drain electrode is always low. Additional N-channel HfMOS transistors have been fabricated and tested at different temperatures. The pinch-off voltage increases with increasing temperature in these depletion-type units. Life tests of encapsulated hafnium-hafnium-dioxide capacitors show no significant change with time 2000 hours. The rate of anodization of purer hafnium films is being re-examined. Author
- Electrical and Electronic Equipment