COMPUTER MODELS OF THE FIELD-EFFECT TRANSISTOR.
TEXAS UNIV AUSTIN LABS FOR ELECTRONICSAND RELATED SCIENCE RESEARCH
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Network analysis programs may be used to analyze complex electronic circuits. This requires that models for the active devices in these circuits be developed. A nonlinear model of the field-effect transistor is presented for use in large-signal applications. From this model several piecewise-linear models suitable for use with Electronic Circuit Analysis Program ECAP are derived. The approximations required in these models are evaluated, and models intended for use in pulse inverters and choppers are presented. Techniques for measuring the parameters in the models are described and results of the measurement of these parameters for a sample of field-effect transistors are given. Finally, the behavior of a sample of these devices in pulse inverter and chopper circuits is compared to the behavior of the device models in computer simulation of the circuits. Author
- Electrical and Electronic Equipment