HIGH-INFORMATION-DENSITY STORAGE SURFACES.
Quarterly rept. no. 8, 1 Jan-31 Mar 67,
STANFORD RESEARCH INST MENLO PARK CALIF
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This program is now devoted to the preparation and investigation of two novel kinds of electron beam addressable storage elements of about micron size and densely packed arrays of these elements. One kind of element, called a micro-cap, consists of an isolated microcapacitor at the bottom of a hole in a metal-dielectric film sandwich. The other kind, called a micron-ring, consists of an isolated metal film ring embedded concentrically within a hole in a metal-dielectric film sandwich. During this quarter, storage and readout work on the micro-cap elements was extended to higher beam voltages. It was found that at higher voltages more read passes could be made on the storage array before the binary information was lost. The mildly bakeable 400C field emitter and molybdenum lens system and its associated commercial ultra-high vacuum system is being assembled for operational tests. Work on storage structures is continuing. A larger 6-micron diameter version of the micron-ring type of element suitable for initial tests has been produced and awaits testing. Other methods of producing submicron micron-ring elements are being examined. The electron microscope, which has been converted into a scanning probe for exposure of electron resist, is working satisfactorily, and it should be possible to produce 14-micron wide exposed lines and begin making regular arrays this coming quarter. Author
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