INVESTIGATION OF SOLID-STATE TRAVELING WAVE-AMPLIFIER.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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The report covers an investigation which was conducted to determine the feasibility of a solid-state traveling-wave amplifier. This device consists of an n-type semiconductor in which drifted carriers interact with a slow electromagnetic wave. Methods for characterizing the material are presented. The propagation matrix for the material is derived, including the effects of diffusion and particle-lattice collisions. The thin-film, slow-wave structure is studied. The dispersion equation of a stub-loaded meander line is derived, revealing usable frequencies at which the phase velocity is low and the interaction or coupling impedance is high. Results of fabrication of the slow-wave structure are outlined. Author
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