ANALYSIS AND DESIGN OF MAXIMUM-GAIN, LOW-CURRENT JUNCTION FIELD EFFECT TRANSISTOR CONFIGURATIONS.
Physical sciences research papers no. 318,
AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
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Representative types of junction field effect transistor JFET configurations are analyzed on a qualitative comparative basis to determine the JFET configuration with the largest gain. Experimental results are presented on a small current amplifying device SCAD whose design is based on this determination. Author
- Electrical and Electronic Equipment