Accession Number:

AD0654009

Title:

JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS.

Descriptive Note:

Status rept.,

Corporate Author:

ILLINOIS UNIV URBANA DEPT OF ELECTRICAL ENGINEERING

Report Date:

1967-04-01

Pagination or Media Count:

14.0

Abstract:

The effect of donor impurity states near the indirect 100 conduction band minima on the direct-indirect transition in GaASP is discussed. Ultrathin platelet lasers of CdSe and CdSeS, including visible spectrum continuous CW operation, are described. Instabilities and self-oscillation phenomena in bulk samples of Si compensated with deep levels Au, Co, etc. are discussed. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE