Accession Number:

AD0654001

Title:

HETEROJUNCTION DEVICES.

Descriptive Note:

Interim rept. no. 2, Dec 65-Dec 66,

Corporate Author:

SYRACUSE UNIV RESEARCH INST N Y

Report Date:

1967-05-01

Pagination or Media Count:

139.0

Abstract:

Heterojunctions were prepared by depositing Si epitaxially onto GaAs and GaP substrates using silicon-tellurium compounds as transporting agents. The experimental results are in agreement with the abrupt junction theory for heterojunctions. A quantitative discussion is given for electron tunneling through a Schottky Barrier. An open tube deposition system is described for use in the epitaxial deposition of III-V compounds. Associated water transport problems are discussed. Improvements have been made on a closed tube epitaxial system. A phenomelogical model of the transport and deposition has been formulated which predicts that the ampoule geometry has an appreciable influence on the deposition and may be used as a parameter in the design of an epitaxial system. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE