RADIATION EFFECTS ON THIN-FILM INTEGRATED CIRCUIT ELEMENTS.
Quarterly rept., no. 2, 15 Jan 66-14 Apr 67,
NORTH AMERICAN AVIATION INC ANAHEIM CALIF AUTONETICS DIV
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The efforts of this quarter were directed toward calculating and measuring FXR radiation induced charge in a thin aluminum film 3810 A deposited on a 0.032 inch insulating substrate. The relative importance of the mechanisms for inducing a charge and the influence of a bias voltage on the conductor were analyzed. The net charge change on the sample is the difference between the deposition and the emission in the sample of Compton electrons and secondary electrons. The net charge change from secondary electrons is approximately twice that from Compton electrons. A bias voltage in excess of plus or minus 60 volts on the thin-film conductor controls the net charge changes from secondary electrons but does not influence the Compton electrons. The geometry of the experiment affects the electron to gamma ratio of the incident beam which results in a value for the net charge change applicable to the specific experiment only.
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