Accession Number:

AD0653552

Title:

METHOD OF OBTAINING MICROELECTRONIC DIODE MATRIX AND BAND-PASS STRUCTURES,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

• Savchenko,V. I.
• Sidorenko,S. L.

Report Date:

1967-02-23

Pagination or Media Count:

6.0

Abstract:

The production of matrices is simplified and the insulation of blank intersections increased. A germanium plate is subjected to diffusion by Sb vapour in hydrogen at 850C. One of the n layers of the n-p-n structure is removed by electrochemical polishing. The plate is then lined electrolytically with mutually-perpendicular grooves 0.05 mm deep, 0.1-0.15 mm wide with a spacing of 1.4 mm and ground with abrasive powder. A 50 micron copper coating is deposited electrolytically, a polystyrene rectangular network of buses with swellings corresponding to diodes is then superposed and the copper dissolved chemically from the uncovered places. Finally germanium is etched out electrochemically in a 10 solution of NaOH until the p-n germanium bars remain only at intersections. The density of diodes in a matrix amounts to 1200-1400 per 1 cu cm. 14.2.63 as 81901626-24. Author

Descriptors:

• (*MICROELECTRONICS
• *DIODES)
• GERMANIUM
• ELECTROLYTIC POLISHING
• HYDROGEN
• COPPER
• ELECTROCHEMISTRY
• DENSITY
• ABRASIVES
• SODIUM COMPOUNDS
• HYDROXIDES
• USSR

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE