Accession Number:

AD0653512

Title:

DEVELOPMENT OF SEMICONDUCTOR DEVICES,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

• Hsieh,Hsi-teh

Report Date:

1967-01-25

Pagination or Media Count:

13.0

Abstract:

Rapid progresses are made in the development of semiconductor devices such as transistors and semiconductor solid circuits. Germanium triodes having a cutoff frequency as high as 4200 mcsec and silicon transistors having an operating frequency of 500 mcsec and an output power of 1.5 w have been developed. New techniques used in semiconductor device production are isotope techniques for analyzing the impurity contents in germanium, silicon, and other semiconductor materials optical engraving process and microphotography for multiple circuit printing and geometric projection filming process in the production of flat silicon triodes, capacitors, and resistors having a diffused antimonial base and a boron emitter. Semiconductor lasers having a gallium arsenide diode or an indium arsenide diode developed in recent years are based on the fundamental theories of physics. Author concludes that the applications of semiconductor devices must be extended to different industries and new processes must be developed to facilitate semiconductor device production. Author

Descriptors:

• *SEMICONDUCTOR DEVICES
• *TRANSISTORS
• SILICON
• FREQUENCY
• GERMANIUM
• TRIODES
• CAPACITANCE
• LASERS
• INDUSTRIES
• GALLIUM ARSENIDES
• MICROPHOTOGRAPHY
• BORON
• ISOTOPES
• INDIUM
• CHINA

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE