Accession Number:

AD0653506

Title:

GALLIUM ARSENIDE SEMICONDUCTOR MATERIALS,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

• Chao,Chen-sze

Report Date:

1967-01-25

Pagination or Media Count:

9.0

Abstract:

The document is based on a translation of a foreign non-Chinese paper, the origin of which is not mentioned. Desirable features of gallium arsenide include high electron migration rate, high operating temperature, high operating voltage, and high radiation resistance. Gallium arsenide elements are capable of operating at 300 to -180C. Possession of a high radiation-resistant property enables the use of gallium arsenide elements in artificial satellites and space vehicles. Gallium arsenide reactance tubes have a cutoff frequency beyond 800 kmc, and gallium arsenide switch tubes have a switching speed lower than 10 to the -9th power sec. A gallium arsenide laser having a luminous efficiency of 60 and a high output power has been developed. The laser can be used for short-distance communications, microwave modulation, and electronic computer control. Author

Descriptors:

• *SEMICONDUCTORS
• *GALLIUM ARSENIDES
• DAMAGE
• RADIATION EFFECTS
• LASERS
• CHINA

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE