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WAVE PROPAGATION IN SEMICONDUCTORS WITH DRIFTING CARRIERS,
NORGES TEKNISKE HOEGSKOLE TRONDHEIM DIV OF PHYSICAL ELECTRONICS
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A macroscopic theory for propagation of plane RF waves in semiconductors is presented. The first part deals with an extrinsic semiconductor where the elementary modes and their dispersion relations are derived from the wave equation. General boundary conditions for a semi-infinite semiconductor bounding to vacuum are considered, and six possible modes of wave propagation are found. A general expression for the power density of a plane wave is derived and used to establish a criterion for active behaviour of the medium. Instability phenomena and their relation to possible amplifying and oscillating behaviour of the medium are considered. In the last part the analysis is extended to semiconductors having two types of carriers. The dispersion relations are derived. In particular, propagation of carrier waves in an electron-hole plasma and a two-valley semiconductor is considered. Author
APPROVED FOR PUBLIC RELEASE