ELECTRON SHIELDING IN N-INSB.
Technical rept. no. 3, 1 Jun 66-31 May 67,
COLORADO UNIV BOULDER DEPT OF PHYSICS AND ASTROPHYSICS
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The effect on bound electrons in donor levels by conduction band electrons in n-InSb is investigated using a self-consistent calculation. Results of the calculations show that no bound state exists for impurity concentrations greater than 6 x 10 to the 13th power per cubic centimeter. This shielding appears to be the predominant effect leading to the lack of impurity binding energy. Author
- Solid State Physics