HIGH-INFORMATION-DENSITY STORAGE SURFACES.
Quarterly rept. no. 7, 1 Oct 66-31 Dec 66,
STANFORD RESEARCH INST MENLO PARK CALIF
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This program is now devoted to the preparation and investigation of two novel kinds of electron-beam addressable storage elements of about micron size and densely packed arrays of these elements. One kind of element, called a micro-cap, consists of an isolated microcapacitor at the bottom of a hole in a metal-dielectric film sandwich. The other kind, called a micro-ring, consists of an isolated metal film ring embedded concentrically with a hole in a metal-dielectric film sandwich. During this quarter, several techniques for storage and readout on randomly distributed micro-cap storage elements were demonstrated. One storage technique probably involved bombardment-induced conductivity BIC however, the presence of BIC in the experiment was not conclusively proved. A new mildly bakeable 400C field-emitter lens with molybdenum elements, and its associated commercial ultra-high-vacuum system, is being readied for operation. Work on storage structures is proceeding in several concurrent directions. First, the preparation of mosaics having randomly distributed micro-cap elements is continuing. Second, several techniques for producing isolated rings for micro-ring elements are under consideration, and preliminary experimental work on one technique has yielded promising results. Third, efforts are continuing on electron beam techniques for making regular arrays of densely-packed storage elements starting from raster exposure of an electron sensitive resist. Author
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