MICROWAVE DETECTORS USING HOT CARRIER EFFECTS.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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A new class of solid state microwave detectors based upon the hot carrier properties of majority carriers in germanium has been recently described by Harrison and Zucker. Hot carrier detectors are based upon the nonequilibrium carrier distribution which results when an incident microwave field accelerates the free carriers so that they acquire more energy than the lattice in which they reside. These hot carriers, out of equilibrium with the lattice, give rise to a thermoelectric voltage which is proportional to the incident R.F. field. This report describes the design, fabrication, and performance of hot carrier detectors using high resistivity silicon and bonded point contacts. Direct-current characteristics as well as R.F. properties in the range from 1-10 GHz are described. Of particular interest are power sensitivity, dynamic range, and power handling capability. Author
- Electrical and Electronic Equipment