Accession Number:

AD0650738

Title:

THEORY OF OHMIC CONTACTS.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s):

Report Date:

1967-02-01

Pagination or Media Count:

19.0

Abstract:

Contact resistivity of a metal-semiconductor area contact is calculated for 10 to the 18th power - 10 to the 20th powercu cm doping range, for n-type semiconductors and 0.7 - 1.0 eV barrier heights employing a thermionic-field emission model with neglect of barrier width fluctuation. Application to design of ohmic contact to group IV and III-V semiconductors is indicated. A criterion for an electrically good ohmic contact is proposed and the frequently encountered patchiness problem in practical alloy-contact work is discussed. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE