THEORY OF OHMIC CONTACTS.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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Contact resistivity of a metal-semiconductor area contact is calculated for 10 to the 18th power - 10 to the 20th powercu cm doping range, for n-type semiconductors and 0.7 - 1.0 eV barrier heights employing a thermionic-field emission model with neglect of barrier width fluctuation. Application to design of ohmic contact to group IV and III-V semiconductors is indicated. A criterion for an electrically good ohmic contact is proposed and the frequently encountered patchiness problem in practical alloy-contact work is discussed. Author
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