THIN FILM RC NETWORKS FOR SILICON INTEGRATED CIRCUITS.
Quarterly rept. no. 2, 1 Nov 66-30 Jan 67,
MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
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Areas of investigation were Maximum useable resistance of TaSi2, Cr3Si, Al2O3 films increased to 10,000 ohms per square with TCR -300 ppmC. Started evaluation of flash evaporated Ta2O5 metal powder for R sub s or 15,000 ohm-per-square cermet resistors. 1000 hour, 200C storage tests completed on 100 5k ohm-per-square cermet resistors. No failures were observed and maximum resistance change was less than 1 percent. Preliminary investigation of the properties of the following RF sputtered dielectrics a TiO2 films sputtered from pressed TiO2 sources b Titanate films sputtered from a pressed BaTiO3 source and from a doped BaTiO3 source. Defined sputtering conditions for depositing good Al films to be used as capacitor bottom electrodes, i.e., Al which shows little change in structure with 450C air bakes. Deposited and trimmed 25k ohm-per-square cermets on two-gate MIC-C50 gate circuit wafers. Design and breadboard evaluation was completed of an IF amplifier. The integrated circuit version will contain 6 thin film capacitors and 12 thin film resistors. Mask layout work for the integrated IF amplifier is in process. Author
- Electrical and Electronic Equipment