EFFECTS OF RADIATION ON SEMICONDUCTOR MATERIALS AND DEVICES
Final rept. 1 Oct 1964-30 Nov 1966
WESTERN ELECTRIC CO INC NEW YORK
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Results of investigations on the effects of nuclear radiation on semiconductor materials, device surfaces, and devices are discussed. Radiation damage in gallium phosphide was studied using electro- and cathodo-luminescence. Studies were also made of radiative and non-radiative recombination mechanisms in various compound and elemental semiconductors. A non-radiative Auger-type mechanism observed at neutral defect centers appears to explain non-radiative lifetime degradation from both chemical and radiation damage defects. The Fermi level dependence of the ESR spectrum associated with the phosphorus-vacancy complex was studied in electron-bombarded, phosphorus-doped LOPEX silicon. These studies confirm one assumption that the Si-G8 E center is not seen until the Fermi level falls below E sub C -0.48 eV. Experiments to determine the effects of device bias, temperature, and radiation dose rate on surface damage to MOS FETs showed qualitative agreement with a model of positive space charge buildup at traps in the devices SiO2 layer.
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics