GENERALIZED MODEL FOR SEMICONDUCTOR RADIATION RESPONSE PREDICTION.
Quarterly rept. no. 7, 15 Sep-14 Dec 66,
NORTRONICS NEWBURY PARK CALIF APPLIED RESEARCH DEPT
Pagination or Media Count:
Electrical and ionizing radiation experiments were performed on junction isolated monolithic integrated transistor and resistor elements and comparisons are presented between their measured and calculated junction areas and electrical and ionizing radiation response. The electrical lumped-model representation of a junction field effect ransistor was developed. The bipolar transistor model was increased in detail so that the following parameters are now variable collector depletion layer width, collector lifetime, and emitter and collector junction capacitance. A sophisticated numerical integration routine for solving lumped model equations is presented. A test fixture designed to minimize parasitic radiation response is described. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics