HIGH PERFORMANCE THIN FILMS FOR MICROCIRCUITS.
Quarterly progress rept. no. 7, 1 Sep-30 Nov 66,
RADIO CORP OF AMERICA SOMERVILLE N J DEFENSE MICROELECTRONICS
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The rate of hafnium films deposited with a new sputtering system has been studied in more detail. A hexagonally shaped substrate holder, which rotates to six different positions, allows performance of 5 sputtering runs without breaking the vacuum. Hafnium films can be deposited at a rate of 1200 Amin with a sputtering voltage of 2800 volts after the cathode has been cleaned in a pre-sputtering cleaning cycle lasting 60 minutes. The uniformity of the hafnium films over a 3x5 inch area is plus or minus 2 if a cathode of 6x6 inch size is utilized. A floating technique for hafnium-hafnium-dioxide capacitors has been developed and crystallographic examination of these films has been started. Author
- Electrical and Electronic Equipment