DIFFUSION STUDIES IN LEAD SULFIDE.
Final rept., 1 Feb 62-31 Jan 67,
NORTHWESTERN UNIV EVANSTON ILL DEPT OF MATERIALS SCIENCE
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The ratio of tracer diffusion coefficients, D sub Pb 210D sub Bi 210, at 700C is independent of deviations from stoichiometry for undoped lead sulfide single crystals and crystals doped with 4 x 10 to the 18th power and 4 x 10 to the 19th power bismuth atoms and is equal to one. The addition of 4 x 10 to the 18th power atoms of bismuth to lead sulfide does not increase the diffusion coefficients of Pb210 and Bi210 for -6.7 log p sub S2 0.0 at 700C. For log p sub S2 -3.9 and at 700C the singly ionized cation vacancy is the predominant defect through which Pb210 and Bi210 diffuse and is the majority atomic defect in undoped lead sulfide and lead sulfide doped with 4 x 10 to the 18th power bismuth atoms. The addition of 4 x 10 to the 19th power atoms of bismuth increases the self-diffusion coefficients of Pb210 and Bi210 for -6.7 log p sub S2 0 at 700C. Author
- Solid State Physics