Accession Number:

AD0648991

Title:

THIN FILM TECHNIQUES FOR SILICON INTEGRATED CIRCUITS.

Descriptive Note:

Final rept. 1 Jun 64-31 Jul 66,

Corporate Author:

MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV

Personal Author(s):

• Terry,L. E.

Report Date:

1967-02-01

Pagination or Media Count:

109.0

Abstract:

The compatibility of certain thin film passive device processing and materials with silicon integrated circuits was verified. In particular, 4000-ohms-per-square resistive and 0.6-pF-per-sq mil capacitive elements have been fabricated on silicon wafers containing a 2N708 transistor. The properties of flash-evaporated cermet resistors were investigated as functions of the process parameters, powder drop rate, source temperature, and system pressure. Radio-frequency dielectric sputtering was briefly investigated and promises to be a major tool in the formation of high quality dielectric films. The electrical characteristics of thin film resistive and capacitive elements were measured at frequencies up to 10 GHz. Author

Descriptors:

• (*INTEGRATED CIRCUITS
• FILMS)
• (*SILICON
• INTEGRATED CIRCUITS)
• CERMETS
• RESISTORS
• ANODIC COATINGS
• SPUTTERING
• DIELECTRICS
• CAPACITORS
• COMPATIBILITY

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE