Accession Number:

AD0648820

Title:

DETAILED RADIATION EFFECTS STUDY ON FOUR JUNCTION-ISOLATED MICROCIRCUITS.

Descriptive Note:

Final rept., Nov 65-Jun 66,

Corporate Author:

BOEING CO SEATTLE WASH

Personal Author(s):

Report Date:

1967-01-01

Pagination or Media Count:

79.0

Abstract:

Four circuits, including three differential amplifiers and one line driver, have been studied in pulsed ionizing radiation at rates ranging from 10 to the 7th power radssec to 3 x 10 to the 11th power radssec and in a neutron environment to fluences up to 2 x 10 to the 15th power nsq cm. All of the circuits used junction isolation. The isolation junction photocurrent dominated the response in each case. One of the amplifiers experienced latchup at approximately 1 to 5 rads prompt dose when its isolation junction went into second breakdown. Neutron irradiation brought about fatal degradation at fluences of the order of 10 to the 15th power nsq cm due to changes in the minority carrier liketime in the base region of the circuits transistors. There is evidence of surface effects being present in the amplifiers however, this mechanism of degradation is secondary to the bulk damage. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE