Accession Number:

AD0648742

Title:

RADIATION EFFECTS ON THIN-FILM MICROELECTRONICS.

Descriptive Note:

Final rept. no. 5, 15 Jul 65-14 Oct 66,

Corporate Author:

NORTH AMERICAN AVIATION INC ANAHEIM CALIF AUTONETICS DIV

Personal Author(s):

Report Date:

1967-02-01

Pagination or Media Count:

42.0

Abstract:

The report describes the program to investigate the mechanisms of transient radiation effects on thin-film passive components. The effects under study included secondary emission effects, radiation-induced conductivity, memory and accumulated dose effects and damage by neutron irradiation. Radiation sources used were the 2 MeV and 600 keV flash X-ray machines, LINAC, and Fast Burst Reactor FBR. A group of thin-film capacitors for studying the various effects was designed and fabricated. These capacitors were irradiated in air and in vacuum to determine the relative importance of the ambient environment on the total radiation-induced disturbance. Particular attention was paid to the effects of materials in the immediate proximity of the devices under study to determine methods of minimizing the effects of transient radiation.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE