Accession Number:

AD0648453

Title:

RADIATION EFFECTS IN THIN-FILM TRANSISTORS.

Descriptive Note:

Quarterly rept. no. 1, 1 Sep-30 Nov 66,

Corporate Author:

HUGHES AIRCRAFT CO FULLERTON CALIF

Personal Author(s):

• Honnold,V. R.
• Thomas,G. D.
• Berggren,C. C.

Report Date:

1967-02-01

Pagination or Media Count:

33.0

Abstract:

The purpose of this program is to improve the radiation response of silicon-on-sapphire SOS thin film transistors by device variations selected on the basis of prior work and device analysis. The response will be related to a selection of design variations that will minimize the radiation response to ionizing and displacement producing radiation. The program consists of a statistically designed radiation experiment on a set of devices incorporating selected design variations, together with the development of the necessary design equations. During the First Quarter, the statistically designed experiment was developed based on a 2 to the 5th power factorial plan. A computer program was developed for data reduction according to principles of the analysis of variance. In addition, the basic design equation was developed from charge control theory. Author

Descriptors:

• *TRANSISTORS
• *DAMAGE
• FILMS
• TRANSIENTS
• SILICON
• SAPPHIRE
• EXPERIMENTAL DESIGN
• EXPERIMENTAL DESIGN

Subject Categories:

• Electrical and Electronic Equipment
• Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE