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RADIATION EFFECTS IN THIN-FILM TRANSISTORS.
Quarterly rept. no. 1, 1 Sep-30 Nov 66,
HUGHES AIRCRAFT CO FULLERTON CALIF
Pagination or Media Count:
The purpose of this program is to improve the radiation response of silicon-on-sapphire SOS thin film transistors by device variations selected on the basis of prior work and device analysis. The response will be related to a selection of design variations that will minimize the radiation response to ionizing and displacement producing radiation. The program consists of a statistically designed radiation experiment on a set of devices incorporating selected design variations, together with the development of the necessary design equations. During the First Quarter, the statistically designed experiment was developed based on a 2 to the 5th power factorial plan. A computer program was developed for data reduction according to principles of the analysis of variance. In addition, the basic design equation was developed from charge control theory. Author
APPROVED FOR PUBLIC RELEASE