ADVANCED INTEGRATED CIRCUIT DEVELOPMENT.
Final rept. 8 Mar 65-8 Jul 66,
RADIATION INC MELBOURNE FLA PHYSICAL ELECTRONICS DIV
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The report describes work done toward developing processes for the fabrication of NPN, PNP, and field effect devices in a monolithic chip. A method for producing material containing dielectrically isolated N and P type collector regions of homogeneous single crystal silicon was devised and developed. A diffusion flow process for the production of a monolithic operational amplifier circuit containing NPN transistors, PNP transistors, MOS field effect devices, and thin film resistors was investigated. Techniques involved in fabricating this circuit and the processing difficulties encountered are discussed. The characteristics of the devices and of the operational amplifier circuit are reported. Author
- Electrical and Electronic Equipment
- Solid State Physics