Accession Number:

AD0647834

Title:

ADVANCED INTEGRATED CIRCUIT DEVELOPMENT.

Descriptive Note:

Final rept. 8 Mar 65-8 Jul 66,

Corporate Author:

RADIATION INC MELBOURNE FLA PHYSICAL ELECTRONICS DIV

Personal Author(s):

• Combs,Clyde
• Taylor,Gordon

Report Date:

1967-01-01

Pagination or Media Count:

128.0

Abstract:

The report describes work done toward developing processes for the fabrication of NPN, PNP, and field effect devices in a monolithic chip. A method for producing material containing dielectrically isolated N and P type collector regions of homogeneous single crystal silicon was devised and developed. A diffusion flow process for the production of a monolithic operational amplifier circuit containing NPN transistors, PNP transistors, MOS field effect devices, and thin film resistors was investigated. Techniques involved in fabricating this circuit and the processing difficulties encountered are discussed. The characteristics of the devices and of the operational amplifier circuit are reported. Author

Descriptors:

• *SOLID STATE PHYSICS
• *SILICON
• INTEGRATED CIRCUITS
• INTEGRATED CIRCUITS
• FIELD EFFECT TRANSISTORS
• TRANSISTOR AMPLIFIERS
• SUBSTRATES

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE