THIN FILM RC NETWORKS FOR SILICON INTEGRATED CIRCUITS.
Quarterly rept. no. 1, 1 Aug-1 Nov 66,
MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
Pagination or Media Count:
Areas of investigation covered were 1 A compatible process for depositing and trimming cermet resistors to a target value of 5000 ohms per square plus or minus 5 percent with a yield of 60 percent 87 percent within plus or minus 10 percent was demonstrated. 2 Evaluation of various flash evaporated metal-dielectric cermet mixtures for 25,000 ohms per square resistor films was initiated. 3 In preliminary experiments, resistor films of 300 and 2000 ohms per square were RF sputtered from large area sources of CrSi2 and mixture A of TaSi2, Cr3Si, and Al2O3. 4 Process of completely compatible thin film capacitors and RF sputtered SiO2 and Al2O3 is presently being completed. 5 Films of BN and Si3N4 were RF sputtered onto silicon wafers. The films were similar to SiO2 and Al2O3, respectively, in quality and dielectric constants. 6 Investigated properties of RF reactive sputtered Ta, Si, Al oxide films. Capacitors 2.3 pFsq mil - 8 volts were formed from the dielectrics. 7 RF sputtered SiO2 on wafers containing transistors may decrease beta. The beta degradation is not permanent and can be recovered by a mild wash-bake cleaning cycle. 8 A linear amplifier circuit has been designed and breadboarded for evaluation before proceeding to the integrated thin film resistors and capacitors. Author
- Electrical and Electronic Equipment